All MOSFET. NCE65TF130T Datasheet

 

NCE65TF130T MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE65TF130T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   Maximum Drain Current |Id|: 28 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 37.5 nC
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 120 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
   Package: TO247

 NCE65TF130T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE65TF130T Datasheet (PDF)

 ..1. Size:423K  1
nce65tf130t.pdf

NCE65TF130T
NCE65TF130T

NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

 ..2. Size:1334K  ncepower
nce65tf130t.pdf

NCE65TF130T
NCE65TF130T

NCE65TF130TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applicati

 4.1. Size:1828K  ncepower
nce65tf130f nce65tf130 nce65tf130d.pdf

NCE65TF130T
NCE65TF130T

NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind

 4.2. Size:623K  ncepower
nce65tf130d nce65tf130 nce65tf130f.pdf

NCE65TF130T
NCE65TF130T

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,

 6.1. Size:620K  ncepower
nce65tf180f nce65tf180 nce65tf180d.pdf

NCE65TF130T
NCE65TF130T

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,

 6.2. Size:417K  ncepower
nce65tf180t.pdf

NCE65TF130T
NCE65TF130T

NCE65TF180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

 6.3. Size:618K  ncepower
nce65tf180d nce65tf180 nce65tf180f.pdf

NCE65TF130T
NCE65TF130T

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) typ.with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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