HGA040N06SL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGA040N06SL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 69 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 1270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO-220F

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HGA040N06SL datasheet

 ..1. Size:780K  cn hunteck
 hga040n06sl.pdf pdf_icon

HGA040N06SL

HGA040N06SL P-1 60V N-Ch Power MOSFET 60 V VDS Feature 3.2 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.4 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 69 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMP

 4.1. Size:772K  cn hunteck
 hga040n06s.pdf pdf_icon

HGA040N06SL

HGA040N06S P-1 60V N-Ch Power MOSFET 60 V VDS Feature 3.4 RDS(on),typ m Optimized for high speed switching 76 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit P

 9.1. Size:902K  cn hunteck
 hga046ne6a.pdf pdf_icon

HGA040N06SL

P-1 HGA046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4.7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 53 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin

 9.2. Size:791K  cn hunteck
 hga045ne4sl.pdf pdf_icon

HGA040N06SL

HGA045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 59 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMP

MOSTRAR MÁS

Otros transistores... HY3506B, LTP70N06P, NCE65TF130T, HG3P056N20S, HG3P095N25S, HGA025N06S, HGA028NE6AL, HGA040N06S, IRF9540, HGA045NE4SL, HGA046NE6A, HGA046NE6AL, HGA053N06S, HGA053N06SL, HGA055N10SL, HGA058N08SL, HGA059N08A