All MOSFET. HGA040N06SL Datasheet

 

HGA040N06SL Datasheet and Replacement


   Type Designator: HGA040N06SL
   Marking Code: GA040N06SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 49 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220F
 

 HGA040N06SL substitution

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HGA040N06SL Datasheet (PDF)

 ..1. Size:780K  cn hunteck
 hga040n06sl.pdf pdf_icon

HGA040N06SL

HGA040N06SL P-160V N-Ch Power MOSFET60 VVDSFeature3.2RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability69 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMP

 4.1. Size:772K  cn hunteck
 hga040n06s.pdf pdf_icon

HGA040N06SL

HGA040N06S P-160V N-Ch Power MOSFET60 VVDSFeature3.4RDS(on),typ m Optimized for high speed switching76 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitP

 9.1. Size:902K  cn hunteck
 hga046ne6a.pdf pdf_icon

HGA040N06SL

P-1HGA046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability53 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin

 9.2. Size:791K  cn hunteck
 hga045ne4sl.pdf pdf_icon

HGA040N06SL

HGA045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability59 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMP

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Keywords - HGA040N06SL MOSFET datasheet

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