HGA040N06SL Specs and Replacement

Type Designator: HGA040N06SL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO-220F

HGA040N06SL substitution

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HGA040N06SL datasheet

 ..1. Size:780K  cn hunteck
 hga040n06sl.pdf pdf_icon

HGA040N06SL

HGA040N06SL P-1 60V N-Ch Power MOSFET 60 V VDS Feature 3.2 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.4 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 69 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMP... See More ⇒

 4.1. Size:772K  cn hunteck
 hga040n06s.pdf pdf_icon

HGA040N06SL

HGA040N06S P-1 60V N-Ch Power MOSFET 60 V VDS Feature 3.4 RDS(on),typ m Optimized for high speed switching 76 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit P... See More ⇒

 9.1. Size:902K  cn hunteck
 hga046ne6a.pdf pdf_icon

HGA040N06SL

P-1 HGA046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4.7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 53 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin... See More ⇒

 9.2. Size:791K  cn hunteck
 hga045ne4sl.pdf pdf_icon

HGA040N06SL

HGA045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 59 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMP... See More ⇒

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Detailed specifications: HY3506B, LTP70N06P, NCE65TF130T, HG3P056N20S, HG3P095N25S, HGA025N06S, HGA028NE6AL, HGA040N06S, IRF9540, HGA045NE4SL, HGA046NE6A, HGA046NE6AL, HGA053N06S, HGA053N06SL, HGA055N10SL, HGA058N08SL, HGA059N08A

Keywords - HGA040N06SL MOSFET specs

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