HGA045NE4SL Todos los transistores

 

HGA045NE4SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGA045NE4SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 59 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 756 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO-220F
 

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HGA045NE4SL Datasheet (PDF)

 ..1. Size:791K  cn hunteck
 hga045ne4sl.pdf pdf_icon

HGA045NE4SL

HGA045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability59 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMP

 9.1. Size:772K  cn hunteck
 hga040n06s.pdf pdf_icon

HGA045NE4SL

HGA040N06S P-160V N-Ch Power MOSFET60 VVDSFeature3.4RDS(on),typ m Optimized for high speed switching76 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitP

 9.2. Size:902K  cn hunteck
 hga046ne6a.pdf pdf_icon

HGA045NE4SL

P-1HGA046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability53 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin

 9.3. Size:780K  cn hunteck
 hga040n06sl.pdf pdf_icon

HGA045NE4SL

HGA040N06SL P-160V N-Ch Power MOSFET60 VVDSFeature3.2RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability69 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMP

MOSTRAR MÁS

Otros transistores... LTP70N06P , NCE65TF130T , HG3P056N20S , HG3P095N25S , HGA025N06S , HGA028NE6AL , HGA040N06S , HGA040N06SL , 2N7000 , HGA046NE6A , HGA046NE6AL , HGA053N06S , HGA053N06SL , HGA055N10SL , HGA058N08SL , HGA059N08A , HGA059N12S .

History: AP4563AGH | VP2450N3

 

 
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