HGA053N06SL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGA053N06SL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 54 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 793 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm

Encapsulados: TO-220F

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HGA053N06SL datasheet

 ..1. Size:771K  cn hunteck
hga053n06sl.pdf pdf_icon

HGA053N06SL

HGA053N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 4.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.5 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 54 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain

 4.1. Size:913K  cn hunteck
hga053n06s.pdf pdf_icon

HGA053N06SL

P-1 HGA053N06S 60V N-Ch Power MOSFET 60 V VDS Feature 4.8 RDS(on),typ mW Optimized for high speed switching 56 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin

 9.1. Size:812K  cn hunteck
hga059n12sl.pdf pdf_icon

HGA053N06SL

HGA059N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching, Logic Level 5 RDS(on),typ m Enhanced Body diode dv/dt capability 67 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain Pin2 Power Tools

 9.2. Size:812K  cn hunteck
hga059n12s.pdf pdf_icon

HGA053N06SL

HGA059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 4.7 RDS(on),typ m Enhanced Body diode dv/dt capability 66.7 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain TO-220F Pin2 Power Tools

Otros transistores... HGA025N06S, HGA028NE6AL, HGA040N06S, HGA040N06SL, HGA045NE4SL, HGA046NE6A, HGA046NE6AL, HGA053N06S, IRF9540N, HGA055N10SL, HGA058N08SL, HGA059N08A, HGA059N12S, HGA059N12SL, HGA080N10A, HGA080N10AL, HGA080N10S