HGA059N12S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGA059N12S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 58 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 66.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET HGA059N12S

HGA059N12S Datasheet (PDF)

..1. Size:812K cn hunteck
hga059n12s.pdf

HGA059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.7RDS(on),typ m Enhanced Body diode dv/dt capability66.7 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainTO-220FPin2 Power Tools

0.1. Size:812K cn hunteck
hga059n12sl.pdf

HGA059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic Level5RDS(on),typ m Enhanced Body diode dv/dt capability67 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2 Power Tools

7.1. Size:973K cn hunteck
hga059n08a.pdf

HGA059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching5.3RDS(on),typ mW Enhanced Body diode dv/dt capability49 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2TO-220

9.1. Size:762K cn hunteck
hga058n08sl.pdf

HGA058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.9RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness63 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Swit

9.2. Size:771K cn hunteck
hga053n06sl.pdf

HGA053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness54 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

9.3. Size:913K cn hunteck
hga053n06s.pdf

P-1HGA053N06S60V N-Ch Power MOSFET60 VVDSFeature4.8RDS(on),typ mW Optimized for high speed switching56 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin

9.4. Size:788K cn hunteck
hga055n10sl.pdf

HGA055N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature4.9RDS(on),typ VGS=10V m Optimized for high speed smooth 5.8RDS(on),typ VGS=4.5V mswitching,Logic level 62.7 A ID Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and High Speed Circui

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