All MOSFET. HGA059N12S Datasheet

 

HGA059N12S Datasheet and Replacement


   Type Designator: HGA059N12S
   Marking Code: GA059N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 66.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 92 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: TO-220F
 

 HGA059N12S substitution

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HGA059N12S Datasheet (PDF)

 ..1. Size:812K  cn hunteck
 hga059n12s.pdf pdf_icon

HGA059N12S

HGA059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.7RDS(on),typ m Enhanced Body diode dv/dt capability66.7 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainTO-220FPin2 Power Tools

 0.1. Size:812K  cn hunteck
 hga059n12sl.pdf pdf_icon

HGA059N12S

HGA059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic Level5RDS(on),typ m Enhanced Body diode dv/dt capability67 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2 Power Tools

 7.1. Size:973K  cn hunteck
 hga059n08a.pdf pdf_icon

HGA059N12S

HGA059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching5.3RDS(on),typ mW Enhanced Body diode dv/dt capability49 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2TO-220

 9.1. Size:762K  cn hunteck
 hga058n08sl.pdf pdf_icon

HGA059N12S

HGA058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.9RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness63 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Swit

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History: ZVN0545GTC | HGK105N15M

Keywords - HGA059N12S MOSFET datasheet

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