HGA080N10A Todos los transistores

 

HGA080N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGA080N10A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
   Paquete / Cubierta: TO-220F

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HGA080N10A Datasheet (PDF)

 ..1. Size:992K  cn hunteck
hga080n10a.pdf

HGA080N10A
HGA080N10A

P-1HGA080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching7.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability43.5 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 0.1. Size:906K  cn hunteck
hga080n10al.pdf

HGA080N10A
HGA080N10A

HGA080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level7.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness45 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 5.1. Size:988K  cn hunteck
hga080n10s.pdf

HGA080N10A
HGA080N10A

HGA080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability7.3RDS(on),typ mW Enhanced Avalanche Ruggedness42 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 9.1. Size:800K  cn hunteck
hga082n10m.pdf

HGA080N10A
HGA080N10A

HGA082N10M P-1100V N-Ch Power MOSFET100 VFeature VDS6.4RDS(on),typ m Optimized for high speed smooth switching8.2RDS(on),max m Enhanced Body diode dv/dt capability48 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitPin

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