HGA080N10AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGA080N10AL
Código: GA080N10AL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 33 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 45 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 32 nC
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 348 pF
Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET HGA080N10AL
HGA080N10AL Datasheet (PDF)
hga080n10al.pdf
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HGA080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level7.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness45 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
hga080n10a.pdf
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P-1HGA080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching7.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability43.5 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit
hga080n10s.pdf
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HGA080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability7.3RDS(on),typ mW Enhanced Avalanche Ruggedness42 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms
hga082n10m.pdf
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HGA082N10M P-1100V N-Ch Power MOSFET100 VFeature VDS6.4RDS(on),typ m Optimized for high speed smooth switching8.2RDS(on),max m Enhanced Body diode dv/dt capability48 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitPin
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