HGA080N10AL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGA080N10AL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 348 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO-220F

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HGA080N10AL datasheet

 ..1. Size:906K  cn hunteck
 hga080n10al.pdf pdf_icon

HGA080N10AL

HGA080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 7.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 45 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain

 4.1. Size:992K  cn hunteck
 hga080n10a.pdf pdf_icon

HGA080N10AL

P-1 HGA080N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 7.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 43.5 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit

 5.1. Size:988K  cn hunteck
 hga080n10s.pdf pdf_icon

HGA080N10AL

HGA080N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 7.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 42 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Pin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 9.1. Size:800K  cn hunteck
 hga082n10m.pdf pdf_icon

HGA080N10AL

HGA082N10M P-1 100V N-Ch Power MOSFET 100 V Feature VDS 6.4 RDS(on),typ m Optimized for high speed smooth switching 8.2 RDS(on),max m Enhanced Body diode dv/dt capability 48 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin

MOSTRAR MÁS

Otros transistores... HGA053N06S, HGA053N06SL, HGA055N10SL, HGA058N08SL, HGA059N08A, HGA059N12S, HGA059N12SL, HGA080N10A, SPP20N60C3, HGA080N10S, HGA082N10M, HGA090N06SL, HGA093N12SL, HGA098N10A, HGA098N10AL, HGA098N10S, HGA100N12S