HGA090N06SL Todos los transistores

 

HGA090N06SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGA090N06SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 415 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-220F
 

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HGA090N06SL Datasheet (PDF)

 ..1. Size:772K  cn hunteck
 hga090n06sl.pdf pdf_icon

HGA090N06SL

HGA090N06SLP-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness31.8 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDra

 9.1. Size:999K  cn hunteck
 hga098n10a.pdf pdf_icon

HGA090N06SL

P-1HGA098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingVGS=10V9.3RDS(on),typ mW Enhanced Body diode dv/dt capability37 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed Ci

 9.2. Size:1020K  cn hunteck
 hga098n10s.pdf pdf_icon

HGA090N06SL

HGA098N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability9.4RDS(on),typ mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed Circuit

 9.3. Size:1164K  cn hunteck
 hga093n12sl.pdf pdf_icon

HGA090N06SL

HGA093N12SLP-1120V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level 120 VVDS Enhanced Body diode dv/dt capability 7.9RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.5RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 44 AID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS

MOSTRAR MÁS

Otros transistores... HGA058N08SL , HGA059N08A , HGA059N12S , HGA059N12SL , HGA080N10A , HGA080N10AL , HGA080N10S , HGA082N10M , TK10A60D , HGA093N12SL , HGA098N10A , HGA098N10AL , HGA098N10S , HGA100N12S , HGA100N12SL , HGA105N15M , HGA110N10SL .

History: IXTY44N10T | 2SK3574-ZK | PHB110NQ08T | PSMN9R0-25MLC | AM8958 | PHP30NQ15T | 7NM70G-TA3-T

 

 
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