HGA093N12SL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGA093N12SL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 44 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 329 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm

Encapsulados: TO-220F

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HGA093N12SL datasheet

 ..1. Size:1164K  cn hunteck
 hga093n12sl.pdf pdf_icon

HGA093N12SL

HGA093N12SL P-1 120V N-Ch Power MOSFET Feature High Speed Power Switching, Logic Level 120 V VDS Enhanced Body diode dv/dt capability 7.9 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.5 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 44 A ID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS

 9.1. Size:999K  cn hunteck
 hga098n10a.pdf pdf_icon

HGA093N12SL

P-1 HGA098N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching VGS=10V 9.3 RDS(on),typ mW Enhanced Body diode dv/dt capability 37 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Pin2 Hard Switching and High Speed Ci

 9.2. Size:1020K  cn hunteck
 hga098n10s.pdf pdf_icon

HGA093N12SL

HGA098N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 9.4 RDS(on),typ mW Enhanced Avalanche Ruggedness 37 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Pin2 Hard Switching and High Speed Circuit

 9.3. Size:772K  cn hunteck
 hga090n06sl.pdf pdf_icon

HGA093N12SL

HGA090N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 7.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 31.8 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Dra

MOSTRAR MÁS

Otros transistores... HGA059N08A, HGA059N12S, HGA059N12SL, HGA080N10A, HGA080N10AL, HGA080N10S, HGA082N10M, HGA090N06SL, AON7410, HGA098N10A, HGA098N10AL, HGA098N10S, HGA100N12S, HGA100N12SL, HGA105N15M, HGA110N10SL, HGA115N15S