All MOSFET. HGA093N12SL Datasheet

 

HGA093N12SL Datasheet and Replacement


   Type Designator: HGA093N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 329 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
   Package: TO-220F
 

 HGA093N12SL substitution

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HGA093N12SL Datasheet (PDF)

 ..1. Size:1164K  cn hunteck
 hga093n12sl.pdf pdf_icon

HGA093N12SL

HGA093N12SLP-1120V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level 120 VVDS Enhanced Body diode dv/dt capability 7.9RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.5RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 44 AID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS

 9.1. Size:999K  cn hunteck
 hga098n10a.pdf pdf_icon

HGA093N12SL

P-1HGA098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingVGS=10V9.3RDS(on),typ mW Enhanced Body diode dv/dt capability37 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed Ci

 9.2. Size:1020K  cn hunteck
 hga098n10s.pdf pdf_icon

HGA093N12SL

HGA098N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability9.4RDS(on),typ mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed Circuit

 9.3. Size:772K  cn hunteck
 hga090n06sl.pdf pdf_icon

HGA093N12SL

HGA090N06SLP-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness31.8 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDra

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Datasheet: HGA059N08A , HGA059N12S , HGA059N12SL , HGA080N10A , HGA080N10AL , HGA080N10S , HGA082N10M , HGA090N06SL , RFP50N06 , HGA098N10A , HGA098N10AL , HGA098N10S , HGA100N12S , HGA100N12SL , HGA105N15M , HGA110N10SL , HGA115N15S .

History: AP60PN72REN | 2SK2553L | IXTH30N50P | APM7316 | MTP3001N3 | NVMFS016N06C | PMZ290UN

Keywords - HGA093N12SL MOSFET datasheet

 HGA093N12SL cross reference
 HGA093N12SL equivalent finder
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