HGA098N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGA098N10A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 262 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de HGA098N10A MOSFET
HGA098N10A Datasheet (PDF)
hga098n10a.pdf
P-1HGA098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingVGS=10V9.3RDS(on),typ mW Enhanced Body diode dv/dt capability37 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed Ci
hga098n10al.pdf
HGA098N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
hga098n10s.pdf
HGA098N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability9.4RDS(on),typ mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed Circuit
hga093n12sl.pdf
HGA093N12SLP-1120V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level 120 VVDS Enhanced Body diode dv/dt capability 7.9RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.5RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 44 AID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS
Otros transistores... HGA059N12S , HGA059N12SL , HGA080N10A , HGA080N10AL , HGA080N10S , HGA082N10M , HGA090N06SL , HGA093N12SL , 12N60 , HGA098N10AL , HGA098N10S , HGA100N12S , HGA100N12SL , HGA105N15M , HGA110N10SL , HGA115N15S , HGA120N10A .
History: NP88N055MLE | APT20M20LLLG | SQ3442EV | STP6308 | MPSP65M170 | MPSC65M170 | HM25P03Q
History: NP88N055MLE | APT20M20LLLG | SQ3442EV | STP6308 | MPSP65M170 | MPSC65M170 | HM25P03Q
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