HGA098N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGA098N10S
Código: GA098N10S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 30 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 37 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 20 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 468 pF
Resistencia entre drenaje y fuente RDS(on): 0.0105 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET HGA098N10S
HGA098N10S Datasheet (PDF)
hga098n10s.pdf
HGA098N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability9.4RDS(on),typ mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed Circuit
hga098n10a.pdf
P-1HGA098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingVGS=10V9.3RDS(on),typ mW Enhanced Body diode dv/dt capability37 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed Ci
hga098n10al.pdf
HGA098N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
hga093n12sl.pdf
HGA093N12SLP-1120V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level 120 VVDS Enhanced Body diode dv/dt capability 7.9RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.5RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 44 AID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS
hga090n06sl.pdf
HGA090N06SLP-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness31.8 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDra
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