HGA098N10S Specs and Replacement

Type Designator: HGA098N10S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 468 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-220F

HGA098N10S substitution

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HGA098N10S datasheet

 ..1. Size:1020K  cn hunteck
 hga098n10s.pdf pdf_icon

HGA098N10S

HGA098N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 9.4 RDS(on),typ mW Enhanced Avalanche Ruggedness 37 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Pin2 Hard Switching and High Speed Circuit ... See More ⇒

 5.1. Size:999K  cn hunteck
 hga098n10a.pdf pdf_icon

HGA098N10S

P-1 HGA098N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching VGS=10V 9.3 RDS(on),typ mW Enhanced Body diode dv/dt capability 37 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Pin2 Hard Switching and High Speed Ci... See More ⇒

 5.2. Size:990K  cn hunteck
 hga098n10al.pdf pdf_icon

HGA098N10S

HGA098N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 37 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 9.1. Size:1164K  cn hunteck
 hga093n12sl.pdf pdf_icon

HGA098N10S

HGA093N12SL P-1 120V N-Ch Power MOSFET Feature High Speed Power Switching, Logic Level 120 V VDS Enhanced Body diode dv/dt capability 7.9 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.5 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 44 A ID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS ... See More ⇒

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Detailed specifications: HGA080N10A, HGA080N10AL, HGA080N10S, HGA082N10M, HGA090N06SL, HGA093N12SL, HGA098N10A, HGA098N10AL, IRF1010E, HGA100N12S, HGA100N12SL, HGA105N15M, HGA110N10SL, HGA115N15S, HGA120N10A, HGA130N12S, HGA130N12SL

Keywords - HGA098N10S MOSFET specs

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