All MOSFET. HGA098N10S Datasheet

 

HGA098N10S Datasheet and Replacement


   Type Designator: HGA098N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 468 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-220F
 

 HGA098N10S substitution

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HGA098N10S Datasheet (PDF)

 ..1. Size:1020K  cn hunteck
 hga098n10s.pdf pdf_icon

HGA098N10S

HGA098N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability9.4RDS(on),typ mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed Circuit

 5.1. Size:999K  cn hunteck
 hga098n10a.pdf pdf_icon

HGA098N10S

P-1HGA098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingVGS=10V9.3RDS(on),typ mW Enhanced Body diode dv/dt capability37 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed Ci

 5.2. Size:990K  cn hunteck
 hga098n10al.pdf pdf_icon

HGA098N10S

HGA098N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 9.1. Size:1164K  cn hunteck
 hga093n12sl.pdf pdf_icon

HGA098N10S

HGA093N12SLP-1120V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level 120 VVDS Enhanced Body diode dv/dt capability 7.9RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 9.5RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 44 AID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS

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Datasheet: HGA080N10A , HGA080N10AL , HGA080N10S , HGA082N10M , HGA090N06SL , HGA093N12SL , HGA098N10A , HGA098N10AL , IRF1010E , HGA100N12S , HGA100N12SL , HGA105N15M , HGA110N10SL , HGA115N15S , HGA120N10A , HGA130N12S , HGA130N12SL .

History: HN75N09AP | TMU6N70

Keywords - HGA098N10S MOSFET datasheet

 HGA098N10S cross reference
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