HGA105N15M Todos los transistores

 

HGA105N15M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGA105N15M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
   Paquete / Cubierta: TO-220F

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HGA105N15M Datasheet (PDF)

 ..1. Size:813K  cn hunteck
hga105n15m.pdf

HGA105N15M
HGA105N15M

HGA105N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-220F 8.8RDS(on),typ m Enhanced Body diode dv/dt capability50 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2

 9.1. Size:794K  cn hunteck
hga100n12sl.pdf

HGA105N15M
HGA105N15M

HGA100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness49 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching

 9.2. Size:785K  cn hunteck
hga100n12s.pdf

HGA105N15M
HGA105N15M

HGA100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-220F 8.3RDS(on),typ m Enhanced Body diode dv/dt capability49 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainTO-220FPin2

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