All MOSFET. HGA105N15M Datasheet

 

HGA105N15M MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGA105N15M
   Marking Code: GA105N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 74 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-220F

 HGA105N15M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGA105N15M Datasheet (PDF)

 ..1. Size:813K  cn hunteck
 hga105n15m.pdf

HGA105N15M HGA105N15M

HGA105N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-220F 8.8RDS(on),typ m Enhanced Body diode dv/dt capability50 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2

 9.1. Size:794K  cn hunteck
 hga100n12sl.pdf

HGA105N15M HGA105N15M

HGA100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness49 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching

 9.2. Size:785K  cn hunteck
 hga100n12s.pdf

HGA105N15M HGA105N15M

HGA100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-220F 8.3RDS(on),typ m Enhanced Body diode dv/dt capability49 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainTO-220FPin2

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