HGB016N06S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGB016N06S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 4050 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm

Encapsulados: TO-263

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HGB016N06S datasheet

 ..1. Size:863K  cn hunteck
hgb016n06s hgk018n06s hgp019n06s.pdf pdf_icon

HGB016N06S

HGB016N06S , HGK018N06S P-1 HGP019N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.45 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.67 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 340 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited)

 7.1. Size:997K  cn hunteck
hgb016ne6a.pdf pdf_icon

HGB016N06S

HGB016NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 1.35 RDS(on),typ mW Enhanced Avalanche Ruggedness 363 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and

 9.1. Size:1003K  cn hunteck
hgb017n10s.pdf pdf_icon

HGB016N06S

HGB017N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 1.4 RDS(on),typ mW Enhanced Avalanche Ruggedness 354 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High S

 9.2. Size:1002K  cn hunteck
hgb012n08a.pdf pdf_icon

HGB016N06S

P-1 HGB012N08A 80V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 80 V VDS Enhanced Body diode dv/dt capability 0.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 428 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Cir

Otros transistores... HGA2K4N25ML, HGA320N20S, HGB009NE6A, HGB012N08A, HGB012NE6A, HGK012NE6A, HGB014N08A, HGK014N08A, STF13NM60N, HGK018N06S, HGP019N06S, HGB016NE6A, HGB017N10S, HGB019NE6A, HGK019NE6A, HGP019NE6A, HGB020N10S