HGB016N06S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGB016N06S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 4050 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de HGB016N06S MOSFET
- Selecciónⓘ de transistores por parámetros
HGB016N06S datasheet
hgb016n06s hgk018n06s hgp019n06s.pdf
HGB016N06S , HGK018N06S P-1 HGP019N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.45 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.67 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 340 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited)
hgb016ne6a.pdf
HGB016NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 1.35 RDS(on),typ mW Enhanced Avalanche Ruggedness 363 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and
hgb017n10s.pdf
HGB017N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 1.4 RDS(on),typ mW Enhanced Avalanche Ruggedness 354 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High S
hgb012n08a.pdf
P-1 HGB012N08A 80V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 80 V VDS Enhanced Body diode dv/dt capability 0.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 428 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Cir
Otros transistores... HGA2K4N25ML, HGA320N20S, HGB009NE6A, HGB012N08A, HGB012NE6A, HGK012NE6A, HGB014N08A, HGK014N08A, STF13NM60N, HGK018N06S, HGP019N06S, HGB016NE6A, HGB017N10S, HGB019NE6A, HGK019NE6A, HGP019NE6A, HGB020N10S
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