All MOSFET. HGB016N06S Datasheet

 

HGB016N06S Datasheet and Replacement


   Type Designator: HGB016N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 4050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TO-263
 

 HGB016N06S substitution

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HGB016N06S Datasheet (PDF)

 ..1. Size:863K  cn hunteck
 hgb016n06s hgk018n06s hgp019n06s.pdf pdf_icon

HGB016N06S

HGB016N06S , HGK018N06S P-1HGP019N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.45RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.55RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.67RDS(on),typ m 100% UIS Tested, 100% Rg Tested340 AID (Sillicon Limited) Lead Free120 AID (Package Limited)

 7.1. Size:997K  cn hunteck
 hgb016ne6a.pdf pdf_icon

HGB016N06S

HGB016NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability1.35RDS(on),typ mW Enhanced Avalanche Ruggedness363 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and

 9.1. Size:1003K  cn hunteck
 hgb017n10s.pdf pdf_icon

HGB016N06S

HGB017N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability1.4RDS(on),typ mW Enhanced Avalanche Ruggedness354 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested240 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPS Hard Switching and High S

 9.2. Size:1002K  cn hunteck
 hgb012n08a.pdf pdf_icon

HGB016N06S

P-1HGB012N08A80V N-Ch Power MOSFETFeature High Speed Power Smooth Switching80 VVDS Enhanced Body diode dv/dt capability0.9RDS(on),typ mW Enhanced Avalanche Ruggedness428 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested240 AID (Package Limited) Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Cir

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Datasheet: HGA2K4N25ML , HGA320N20S , HGB009NE6A , HGB012N08A , HGB012NE6A , HGK012NE6A , HGB014N08A , HGK014N08A , IRF2807 , HGK018N06S , HGP019N06S , HGB016NE6A , HGB017N10S , HGB019NE6A , HGK019NE6A , HGP019NE6A , HGB020N10S .

History: MTP4N80E | APT80M60J | SIHFB9N65A | SUM110N08-07P | AFN3684S | KHC2300 | SWP068R68E7T

Keywords - HGB016N06S MOSFET datasheet

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 HGB016N06S equivalent finder
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