HGK018N06S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HGK018N06S Datasheet (PDF)

..1. Size:863K cn hunteck
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HGB016N06S , HGK018N06S P-1HGP019N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.45RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.55RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.67RDS(on),typ m 100% UIS Tested, 100% Rg Tested340 AID (Sillicon Limited) Lead Free120 AID (Package Limited)

9.1. Size:1000K cn hunteck
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, P-1HGB014N08A HGK014N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 1.1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.3RDS(on),typ mW Enhanced Avalanche Ruggedness371 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificatio

9.2. Size:1004K cn hunteck
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, P-1HGB012NE6A HGK012NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Smooth SwitchingTO-263 1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.2RDS(on),typ mW Enhanced Avalanche Ruggedness417 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectification

9.3. Size:1282K cn hunteck
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HGB019NE6A HGP019NE6A, P-1HGK019NE6A65V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching TO-263 1.35RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.55RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.65RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 363 A Lead Free, Halogen Free ID (Sillicon Limited)180 A ID (Pack

Otros transistores... HGA320N20S , HGB009NE6A , HGB012N08A , HGB012NE6A , HGK012NE6A , HGB014N08A , HGK014N08A , HGB016N06S , AON6380 , HGP019N06S , HGB016NE6A , HGB017N10S , HGB019NE6A , HGK019NE6A , HGP019NE6A , HGB020N10S , HGK020N10S .