HGK018N06S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGK018N06S
Marking Code: GK018N06S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 124 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 4050 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TO-247
HGK018N06S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGK018N06S Datasheet (PDF)
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