HGK018N06S Specs and Replacement

Type Designator: HGK018N06S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 4050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TO-247

HGK018N06S substitution

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HGK018N06S datasheet

 ..1. Size:863K  cn hunteck
 hgb016n06s hgk018n06s hgp019n06s.pdf pdf_icon

HGK018N06S

HGB016N06S , HGK018N06S P-1 HGP019N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.45 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.67 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 340 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) ... See More ⇒

 9.1. Size:1000K  cn hunteck
 hgb014n08a hgk014n08a.pdf pdf_icon

HGK018N06S

, P-1 HGB014N08A HGK014N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Smooth Switching TO-263 1.1 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 371 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectificatio... See More ⇒

 9.2. Size:1004K  cn hunteck
 hgb012ne6a hgk012ne6a.pdf pdf_icon

HGK018N06S

, P-1 HGB012NE6A HGK012NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Smooth Switching TO-263 1 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 417 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectification ... See More ⇒

 9.3. Size:1282K  cn hunteck
 hgb019ne6a hgk019ne6a hgp019ne6a.pdf pdf_icon

HGK018N06S

HGB019NE6A HGP019NE6A , P-1 HGK019NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 1.35 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.65 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 363 A Lead Free, Halogen Free ID (Sillicon Limited) 180 A ID (Pack... See More ⇒

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Detailed specifications: HGA320N20S, HGB009NE6A, HGB012N08A, HGB012NE6A, HGK012NE6A, HGB014N08A, HGK014N08A, HGB016N06S, IRFZ24N, HGP019N06S, HGB016NE6A, HGB017N10S, HGB019NE6A, HGK019NE6A, HGP019NE6A, HGB020N10S, HGK020N10S

Keywords - HGK018N06S MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs