HGK020N10S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGK020N10S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 429 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 2657 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de HGK020N10S MOSFET
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HGK020N10S datasheet
hgb020n10s hgk020n10s hgp020n10s.pdf
, P-1 HGB020N10S HGK020N10S HGP020N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 1.6 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 1.8 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 1.9 mW 100% UIS Tested, 100% Rg Tested 327 A ID (Sillicon Limited) Lead Free, Halogen Free 180 A ID (Package Limit
hgb020ne4s hgk020ne4s hgp020ne4s.pdf
, P-1 HGB020NE4S HGK020NE4S HGP020NE4S 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.75 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.75 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 288 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Appli
hgb021n08s hgk023n08s hgp024n08s.pdf
, HGB021N08S HGK023N08S P-1 HGP024N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.92 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 2.00 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 290 A ID (Sillicon Limited) Lead Free 205 A ID (Package Limited)
hgb025n06s hgk025n06s hgp025n06s.pdf
, HGB025N06S HGK025N06S P-1 HGP025N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.6 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.8 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.9 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 230 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap
Otros transistores... HGK018N06S, HGP019N06S, HGB016NE6A, HGB017N10S, HGB019NE6A, HGK019NE6A, HGP019NE6A, HGB020N10S, IRF1405, HGP020N10S, HGB020NE4S, HGK020NE4S, HGP020NE4S, HGB021N08A, HGP021N08A, HGB021N08S, HGK023N08S
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