Аналоги HGK020N10S. Основные параметры
Наименование производителя: HGK020N10S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 429 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 32 ns
Cossⓘ - Выходная емкость: 2657 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: TO-247
Аналог (замена) для HGK020N10S
HGK020N10S даташит
hgb020n10s hgk020n10s hgp020n10s.pdf
, P-1 HGB020N10S HGK020N10S HGP020N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 1.6 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 1.8 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 1.9 mW 100% UIS Tested, 100% Rg Tested 327 A ID (Sillicon Limited) Lead Free, Halogen Free 180 A ID (Package Limit
hgb020ne4s hgk020ne4s hgp020ne4s.pdf
, P-1 HGB020NE4S HGK020NE4S HGP020NE4S 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.75 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.75 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 288 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Appli
hgb021n08s hgk023n08s hgp024n08s.pdf
, HGB021N08S HGK023N08S P-1 HGP024N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.92 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 2.00 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 290 A ID (Sillicon Limited) Lead Free 205 A ID (Package Limited)
hgb025n06s hgk025n06s hgp025n06s.pdf
, HGB025N06S HGK025N06S P-1 HGP025N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.6 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.8 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.9 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 230 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap
Другие MOSFET... HGK018N06S , HGP019N06S , HGB016NE6A , HGB017N10S , HGB019NE6A , HGK019NE6A , HGP019NE6A , HGB020N10S , IRF1405 , HGP020N10S , HGB020NE4S , HGK020NE4S , HGP020NE4S , HGB021N08A , HGP021N08A , HGB021N08S , HGK023N08S .
History: FDH3632 | NTP2955G
Список транзисторов
Обновления
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