HGP030N10S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGP030N10S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 850 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm

Encapsulados: TO-220

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HGP030N10S datasheet

 ..1. Size:976K  cn hunteck
hgb027n10s hgk029n10s hgp030n10s.pdf pdf_icon

HGP030N10S

, P-1 HGB027N10S HGK029N10S HGP030N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.25 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 2.42 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 2.50 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 260 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) App

 9.1. Size:968K  cn hunteck
hgb035n08a hgp035n08a.pdf pdf_icon

HGP030N10S

HGB035N08A , HGP035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hig

 9.2. Size:918K  cn hunteck
hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGP030N10S

HGB037N10S HGK037N10S P-1 , HGP037N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.8 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.1 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 190 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap

 9.3. Size:1604K  cn hunteck
hgb037n10t hgp037n10t hga037n10t.pdf pdf_icon

HGP030N10S

HGB037N10T HGP037N10T P-1 , HGA037N10T 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Smooth Switching 3.7 RDS(on),max mW Enhanced Body diode dv/dt capability 168 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools

Otros transistores... HGP025N06S, HGB025N10A, HGB025N12S, HGB027N10A, HGK027N10A, HGP027N10A, HGB027N10S, HGK029N10S, IRF840, HGB027N12S, HGP027N12S, HGB028N08A, HGP028N08A, HGB028NE6A, HGP028NE6A, HGB029N06SL, HGP029N06SL