HGP030N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGP030N10S
Código: GP030N10S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 375 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 125 nC
Tiempo de subida (tr): 22 nS
Conductancia de drenaje-sustrato (Cd): 850 pF
Resistencia entre drenaje y fuente RDS(on): 0.0029 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET HGP030N10S
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History: BUK7515-100A