HGP030N10S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGP030N10S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 850 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de HGP030N10S MOSFET
- Selecciónⓘ de transistores por parámetros
HGP030N10S datasheet
hgb027n10s hgk029n10s hgp030n10s.pdf
, P-1 HGB027N10S HGK029N10S HGP030N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.25 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 2.42 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 2.50 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 260 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) App
hgb035n08a hgp035n08a.pdf
HGB035N08A , HGP035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hig
hgb037n10s hgk037n10s hgp037n10s.pdf
HGB037N10S HGK037N10S P-1 , HGP037N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.8 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.1 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 190 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap
hgb037n10t hgp037n10t hga037n10t.pdf
HGB037N10T HGP037N10T P-1 , HGA037N10T 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Smooth Switching 3.7 RDS(on),max mW Enhanced Body diode dv/dt capability 168 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools
Otros transistores... HGP025N06S, HGB025N10A, HGB025N12S, HGB027N10A, HGK027N10A, HGP027N10A, HGB027N10S, HGK029N10S, IRF840, HGB027N12S, HGP027N12S, HGB028N08A, HGP028N08A, HGB028NE6A, HGP028NE6A, HGB029N06SL, HGP029N06SL
History: AON7524 | CS1N60B1R
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