HGP030N10S Specs and Replacement

Type Designator: HGP030N10S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: TO-220

HGP030N10S substitution

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HGP030N10S datasheet

 ..1. Size:976K  cn hunteck
 hgb027n10s hgk029n10s hgp030n10s.pdf pdf_icon

HGP030N10S

, P-1 HGB027N10S HGK029N10S HGP030N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.25 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 2.42 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 2.50 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 260 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) App... See More ⇒

 9.1. Size:968K  cn hunteck
 hgb035n08a hgp035n08a.pdf pdf_icon

HGP030N10S

HGB035N08A , HGP035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hig... See More ⇒

 9.2. Size:918K  cn hunteck
 hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGP030N10S

HGB037N10S HGK037N10S P-1 , HGP037N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.8 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.1 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 190 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap... See More ⇒

 9.3. Size:1604K  cn hunteck
 hgb037n10t hgp037n10t hga037n10t.pdf pdf_icon

HGP030N10S

HGB037N10T HGP037N10T P-1 , HGA037N10T 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Smooth Switching 3.7 RDS(on),max mW Enhanced Body diode dv/dt capability 168 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools... See More ⇒

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Detailed specifications: HGP025N06S, HGB025N10A, HGB025N12S, HGB027N10A, HGK027N10A, HGP027N10A, HGB027N10S, HGK029N10S, IRF840, HGB027N12S, HGP027N12S, HGB028N08A, HGP028N08A, HGB028NE6A, HGP028NE6A, HGB029N06SL, HGP029N06SL

Keywords - HGP030N10S MOSFET specs

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