HGB027N12S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGB027N12S
   Código: GB027N12S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 429 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 220 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 1332 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET HGB027N12S

HGB027N12S Datasheet (PDF)

..1. Size:979K cn hunteck
hgb027n12s hgp027n12s.pdf

, P-1HGB027N12S HGP027N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.3RDS(on),typ mW Enhanced Avalanche Ruggedness269 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificatio

6.1. Size:1042K cn hunteck
hgb027n10a hgk027n10a hgp027n10a.pdf

HGB027N10A , P-1HGK027N10AHGP027N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested248 AID (Sillicon Limited) Lead Free, Halogen Free

6.2. Size:976K cn hunteck
hgb027n10s hgk029n10s hgp030n10s.pdf

, P-1HGB027N10S HGK029N10SHGP030N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.25RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 2.42RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 2.50RDS(on),typ mW 100% UIS Tested, 100% Rg Tested260 AID (Sillicon Limited) Lead Free120 AID (Package Limited)App

9.1. Size:861K cn hunteck
hgb021n08s hgk023n08s hgp024n08s.pdf

,HGB021N08S HGK023N08S P-1HGP024N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.92RDS(on),typ m Enhanced Avalanche RuggednessTO-220 2.00RDS(on),typ m 100% UIS Tested, 100% Rg Tested290 AID (Sillicon Limited) Lead Free205 AID (Package Limited)

9.2. Size:812K cn hunteck
hgb029n06sl hgp029n06sl.pdf

HGB029N06SL HGP029N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature1.8RDS(on),typ TO-263 VGS=10V m Optimized for high speed switching, Logic LevelVGS=4.5V2.7RDS(on),typ m Enhanced Body diode dv/dt capability2.1RDS(on),typ TO-220 VGS=10V m Enhanced Avalanche RuggednessVGS=4.5V3.0RDS(on),typ m 100% UIS Tested, 100% Rg Tested198 AID (Si

9.3. Size:1129K cn hunteck
hgb020ne4s hgk020ne4s hgp020ne4s.pdf

, P-1HGB020NE4S HGK020NE4SHGP020NE4S45V N-Ch Power MOSFETFeature45 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.75RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 1.75RDS(on),typ mW 100% UIS Tested, 100% Rg Tested288 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Appli

9.4. Size:976K cn hunteck
hgb028n08a hgp028n08a.pdf

HGB028N08A , HGP028N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 2.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.9RDS(on),typ mW Enhanced Avalanche Ruggedness182 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectif

9.5. Size:971K cn hunteck
hgb021n08a hgp021n08a.pdf

HGB021N08A , HGP021N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.7RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2RDS(on),typ mW Enhanced Avalanche Ruggedness285 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectific

9.6. Size:870K cn hunteck
hgb025n06s hgk025n06s hgp025n06s.pdf

,HGB025N06S HGK025N06S P-1HGP025N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.6RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.8RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.9RDS(on),typ m 100% UIS Tested, 100% Rg Tested230 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

9.7. Size:1004K cn hunteck
hgb025n12s.pdf

P-1HGB025N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263-7 1.9RDS(on),typ mW Enhanced Body diode dv/dt capability285 AID (Sillicon Limited) Enhanced Avalanche Ruggedness240 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and Hig

9.8. Size:823K cn hunteck
hgb029ne4sl hgp029ne4sl.pdf

HGB029NE4SL HGP029NE4SL P-1,45V N-Ch Power MOSFET45 VVDSFeature2.2RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level2.9RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability2.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness3.2RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested182 AID (Sillicon Limited)

9.9. Size:972K cn hunteck
hgb023ne6a hgp023ne6a.pdf

,HGB023NE6A HGP023NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 2.2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.5RDS(on),typ mW Enhanced Avalanche Ruggedness190 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Recti

9.10. Size:1055K cn hunteck
hgb020n10s hgk020n10s hgp020n10s.pdf

, P-1HGB020N10S HGK020N10SHGP020N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 1.6 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 1.8 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 1.9 mW 100% UIS Tested, 100% Rg Tested327 AID (Sillicon Limited) Lead Free, Halogen Free180 AID (Package Limit

9.11. Size:999K cn hunteck
hgb025n10a.pdf

HGB025N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching2.0RDS(on),typ mW Enhanced Body diode dv/dt capability258 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain DC/D

9.12. Size:958K cn hunteck
hgb028ne6a hgp028ne6a.pdf

HGB028NE6A , HGP028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 2.3RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 2.6RDS(on),typ mW Enhanced Avalanche Ruggedness181 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain H

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