HGB027N12S Specs and Replacement

Type Designator: HGB027N12S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 429 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1332 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO-263

HGB027N12S substitution

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HGB027N12S datasheet

 ..1. Size:979K  cn hunteck
hgb027n12s hgp027n12s.pdf pdf_icon

HGB027N12S

, P-1 HGB027N12S HGP027N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 2 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 269 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectificatio... See More ⇒

 6.1. Size:1042K  cn hunteck
hgb027n10a hgk027n10a hgp027n10a.pdf pdf_icon

HGB027N12S

HGB027N10A , P-1 HGK027N10A HGP027N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested 248 A ID (Sillicon Limited) Lead Free, Halogen Free ... See More ⇒

 6.2. Size:976K  cn hunteck
hgb027n10s hgk029n10s hgp030n10s.pdf pdf_icon

HGB027N12S

, P-1 HGB027N10S HGK029N10S HGP030N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.25 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 2.42 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 2.50 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 260 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) App... See More ⇒

 9.1. Size:861K  cn hunteck
hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

HGB027N12S

, HGB021N08S HGK023N08S P-1 HGP024N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.92 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 2.00 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 290 A ID (Sillicon Limited) Lead Free 205 A ID (Package Limited) ... See More ⇒

Detailed specifications: HGB025N10A, HGB025N12S, HGB027N10A, HGK027N10A, HGP027N10A, HGB027N10S, HGK029N10S, HGP030N10S, 20N60, HGP027N12S, HGB028N08A, HGP028N08A, HGB028NE6A, HGP028NE6A, HGB029N06SL, HGP029N06SL, HGB029NE4SL

Keywords - HGB027N12S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.