HGK035N10A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGK035N10A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 283 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 923 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm

Encapsulados: TO-247

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HGK035N10A datasheet

 ..1. Size:1072K  cn hunteck
 hgb035n10a hgk035n10a hgp035n10a.pdf pdf_icon

HGK035N10A

, P-1 HGB035N10A HGK035N10A HGP035N10A 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 3.1 RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness 3.3 RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested 3.4 RDS(on),typ TO-220 mW Lead Free 184 A ID (Sillicon Limited) Application 120 A ID (Package Lim

 9.1. Size:918K  cn hunteck
 hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGK035N10A

HGB037N10S HGK037N10S P-1 , HGP037N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.8 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.1 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 190 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap

 9.2. Size:925K  cn hunteck
 hgb039n12s hgk039n12s hgp039n12s.pdf pdf_icon

HGK035N10A

, HGB039N12S HGK039N12S P-1 HGP039N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 3.6 RDS(on),TYP m Enhanced Body diode dv/dt capability 197 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard

 9.3. Size:764K  cn hunteck
 hgk030n06s.pdf pdf_icon

HGK035N10A

HGK030N06S P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching 2.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 190 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switc

MOSTRAR MÁS

Otros transistores... HGP028NE6A, HGB029N06SL, HGP029N06SL, HGB029NE4SL, HGP029NE4SL, HGB035N08A, HGP035N08A, HGB035N10A, IRFB4227, HGP035N10A, HGB037N10S, HGK037N10S, HGP037N10S, HGB037N10T, HGP037N10T, HGA037N10T, HGB037N15M