HGK035N10A Specs and Replacement

Type Designator: HGK035N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 283 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 923 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: TO-247

HGK035N10A substitution

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HGK035N10A datasheet

 ..1. Size:1072K  cn hunteck
 hgb035n10a hgk035n10a hgp035n10a.pdf pdf_icon

HGK035N10A

, P-1 HGB035N10A HGK035N10A HGP035N10A 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 3.1 RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness 3.3 RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested 3.4 RDS(on),typ TO-220 mW Lead Free 184 A ID (Sillicon Limited) Application 120 A ID (Package Lim... See More ⇒

 9.1. Size:918K  cn hunteck
 hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGK035N10A

HGB037N10S HGK037N10S P-1 , HGP037N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.8 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.1 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 190 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap... See More ⇒

 9.2. Size:925K  cn hunteck
 hgb039n12s hgk039n12s hgp039n12s.pdf pdf_icon

HGK035N10A

, HGB039N12S HGK039N12S P-1 HGP039N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 3.6 RDS(on),TYP m Enhanced Body diode dv/dt capability 197 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard... See More ⇒

 9.3. Size:764K  cn hunteck
 hgk030n06s.pdf pdf_icon

HGK035N10A

HGK030N06S P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching 2.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 190 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switc... See More ⇒

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Detailed specifications: HGP028NE6A, HGB029N06SL, HGP029N06SL, HGB029NE4SL, HGP029NE4SL, HGB035N08A, HGP035N08A, HGB035N10A, IRFB4227, HGP035N10A, HGB037N10S, HGK037N10S, HGP037N10S, HGB037N10T, HGP037N10T, HGA037N10T, HGB037N15M

Keywords - HGK035N10A MOSFET specs

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