HGK037N10S Todos los transistores

 

HGK037N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGK037N10S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 580 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: TO-247
 

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HGK037N10S Datasheet (PDF)

 ..1. Size:918K  cn hunteck
 hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGK037N10S

HGB037N10S HGK037N10S P-1,HGP037N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.8RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.1RDS(on),typ m 100% UIS Tested, 100% Rg Tested190 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

 9.1. Size:925K  cn hunteck
 hgb039n12s hgk039n12s hgp039n12s.pdf pdf_icon

HGK037N10S

,HGB039N12S HGK039N12S P-1HGP039N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching3.6RDS(on),TYP m Enhanced Body diode dv/dt capability197 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard

 9.2. Size:1072K  cn hunteck
 hgb035n10a hgk035n10a hgp035n10a.pdf pdf_icon

HGK037N10S

, P-1HGB035N10A HGK035N10AHGP035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness3.3RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ TO-220 mW Lead Free184 AID (Sillicon Limited)Application120 AID (Package Lim

 9.3. Size:764K  cn hunteck
 hgk030n06s.pdf pdf_icon

HGK037N10S

HGK030N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability190 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switc

MOSTRAR MÁS

Otros transistores... HGB029NE4SL , HGP029NE4SL , HGB035N08A , HGP035N08A , HGB035N10A , HGK035N10A , HGP035N10A , HGB037N10S , IRFB4110 , HGP037N10S , HGB037N10T , HGP037N10T , HGA037N10T , HGB037N15M , HGB039N08A , HGP039N08A , HGB039N08S .

History: IXTK20N140 | RJK2017DPE | 8N65KL-TN3-R | 2N5564 | 2SK2530 | EM6K33 | SVS5N65DD2TR

 

 
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