HGK037N10S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HGK037N10S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 56 ns
Cossⓘ - Выходная емкость: 580 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
Тип корпуса: TO-247
Аналог (замена) для HGK037N10S
HGK037N10S Datasheet (PDF)
hgb037n10s hgk037n10s hgp037n10s.pdf

HGB037N10S HGK037N10S P-1,HGP037N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.8RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.1RDS(on),typ m 100% UIS Tested, 100% Rg Tested190 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap
hgb039n12s hgk039n12s hgp039n12s.pdf

,HGB039N12S HGK039N12S P-1HGP039N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching3.6RDS(on),TYP m Enhanced Body diode dv/dt capability197 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard
hgb035n10a hgk035n10a hgp035n10a.pdf

, P-1HGB035N10A HGK035N10AHGP035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness3.3RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ TO-220 mW Lead Free184 AID (Sillicon Limited)Application120 AID (Package Lim
hgk030n06s.pdf

HGK030N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching2.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability190 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switc
Другие MOSFET... HGB029NE4SL , HGP029NE4SL , HGB035N08A , HGP035N08A , HGB035N10A , HGK035N10A , HGP035N10A , HGB037N10S , IRFB4110 , HGP037N10S , HGB037N10T , HGP037N10T , HGA037N10T , HGB037N15M , HGB039N08A , HGP039N08A , HGB039N08S .
History: HCP65R110 | HY1803C2 | OSG65R070PT3F | DAMH50N500H | ME4972-G | P4506BD | SI7617DN
History: HCP65R110 | HY1803C2 | OSG65R070PT3F | DAMH50N500H | ME4972-G | P4506BD | SI7617DN



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