HGP039N08A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGP039N08A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 272 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 1317 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de HGP039N08A MOSFET
HGP039N08A Datasheet (PDF)
hgb039n08a hgp039n08a.pdf

,HGB039N08A HGP039N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.2RDS(on),typ m Enhanced Avalanche Ruggedness196 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectific
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,HGB039N08S HGK039N08S P-1HGP039N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3.1RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.2RDS(on),typ m 100% UIS Tested, 100% Rg Tested187 AID (Sillicon Limited) Lead Free120 AID (Package Limit
hgb039n12s hgk039n12s hgp039n12s.pdf

,HGB039N12S HGK039N12S P-1HGP039N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching3.6RDS(on),TYP m Enhanced Body diode dv/dt capability197 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard
hgb039n15m hgp039n15m.pdf

, P-1HGB039N15M HGP039N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.6RDS(on),typ mW Enhanced Avalanche Ruggedness206 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificat
Otros transistores... HGB037N10S , HGK037N10S , HGP037N10S , HGB037N10T , HGP037N10T , HGA037N10T , HGB037N15M , HGB039N08A , 7N65 , HGB039N08S , HGK039N08S , HGP039N08S , HGB039N12S , HGK039N12S , HGP039N12S , HGB039N15M , HGP039N15M .
History: IRF1404L | STN4NF06L | 2SK2826 | PSMN4R3-30PL | PMV185XN | IRF5M5210 | GSM3310W
History: IRF1404L | STN4NF06L | 2SK2826 | PSMN4R3-30PL | PMV185XN | IRF5M5210 | GSM3310W



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