HGP039N08A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HGP039N08A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 272 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 1317 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
Тип корпуса: TO-220
Аналог (замена) для HGP039N08A
HGP039N08A Datasheet (PDF)
hgb039n08a hgp039n08a.pdf

,HGB039N08A HGP039N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.2RDS(on),typ m Enhanced Avalanche Ruggedness196 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectific
hgb039n08s hgk039n08s hgp039n08s.pdf

,HGB039N08S HGK039N08S P-1HGP039N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3.1RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.2RDS(on),typ m 100% UIS Tested, 100% Rg Tested187 AID (Sillicon Limited) Lead Free120 AID (Package Limit
hgb039n12s hgk039n12s hgp039n12s.pdf

,HGB039N12S HGK039N12S P-1HGP039N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching3.6RDS(on),TYP m Enhanced Body diode dv/dt capability197 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard
hgb039n15m hgp039n15m.pdf

, P-1HGB039N15M HGP039N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.6RDS(on),typ mW Enhanced Avalanche Ruggedness206 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificat
Другие MOSFET... HGB037N10S , HGK037N10S , HGP037N10S , HGB037N10T , HGP037N10T , HGA037N10T , HGB037N15M , HGB039N08A , 7N65 , HGB039N08S , HGK039N08S , HGP039N08S , HGB039N12S , HGK039N12S , HGP039N12S , HGB039N15M , HGP039N15M .
History: DMP6110SSD | PSMN5R8-30LL | CEM3258 | 2SK2513 | CJK1211 | HUFA76437P3
History: DMP6110SSD | PSMN5R8-30LL | CEM3258 | 2SK2513 | CJK1211 | HUFA76437P3



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sd315 | a1013 | 2sb554 | 2sd2560 | 2sc2078 transistor | bc558 datasheet | p75nf75 mosfet | ao4407a