HGB046NE6AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

, P-1HGB046NE6ALHGP046NE6AL65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness4.2RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested6.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free108 AID (Sillic

, P-1HGB046NE6A HGP046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 4.2RDS(on),typ mW Enhanced Avalanche Ruggedness108 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous

HGB040N06SL HGP040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature2.9RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.1RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability3.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.4RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested140 AID (Sillicon Limited)

,HGB042N10S HGP042N10S P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 3.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.7RDS(on),typ m Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220TO-263 Hard Switching and

HGB049N10S HGP049N10S P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 3.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 4.2RDS(on),typ m Enhanced Avalanche Ruggedness152 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectification

, P-1HGB047N12S HGP047N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 3.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.9RDS(on),typ mW Enhanced Avalanche Ruggedness167 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchi

P-1HGB041N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263-7 3.8RDS(on),typ mW Enhanced Body diode dv/dt capability213 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-263-7 Hard Switching and High Speed Circuit

,HGB042N10A HGP042N10A P-1100V N-Ch Power MOSFET100 VVDSFeatureTO-263 3.4RDS(on),typ m Optimized for high speed smooth switchingTO-220 3.7RDS(on),typ m Enhanced Body diode dv/dt capability167 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication DC-DC Conversion Drain Hard Swit

HGB040N06S HGP040N06S P-1,60V N-Ch Power MOSFET60 VVDSFeatureTO-263 3.1RDS(on),typ m Optimized for high speed switchingTO-220 3.4RDS(on),typ m Enhanced Body diode dv/dt capability156 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synch

, P-1HGB045N15S HGK045N15SHGP045N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 4.1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.1RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.1RDS(on),typ mW 100% UIS Tested, 100% Rg Tested194 AID (Sillicon Limited) Lead Free180 AID (Package Limited)