HGB046NE6AL Datasheet and Replacement
Type Designator: HGB046NE6AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 108 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 870 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: TO-263
HGB046NE6AL Datasheet (PDF)
hgb046ne6al hgp046ne6al.pdf

, P-1HGB046NE6ALHGP046NE6AL65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness4.2RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested6.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free108 AID (Sillic
hgb046ne6a hgp046ne6a.pdf

, P-1HGB046NE6A HGP046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 4.2RDS(on),typ mW Enhanced Avalanche Ruggedness108 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
hgb043n15s hgk043n15s hgp043n15s.pdf

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous
hgb040n06sl hgp040n06sl.pdf

HGB040N06SL HGP040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature2.9RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.1RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability3.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.4RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested140 AID (Sillicon Limited)
Datasheet: HGB043N15S , HGK043N15S , HGP043N15S , HGB045N15S , HGK045N15S , HGP045N15S , HGB046NE6A , HGP046NE6A , IRFP250 , HGP046NE6AL , HGB047N12S , HGP047N12S , HGB049N10S , HGP049N10S , HGB050N10A , HGP050N10A , HGB050N14S .
History: FDS6612A | APT24M120B2 | 7N65KL-TQ2-T
Keywords - HGB046NE6AL MOSFET datasheet
HGB046NE6AL cross reference
HGB046NE6AL equivalent finder
HGB046NE6AL lookup
HGB046NE6AL substitution
HGB046NE6AL replacement
History: FDS6612A | APT24M120B2 | 7N65KL-TQ2-T



LIST
Last Update
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
d2390 transistor | 2n5087 equivalent | tip147 datasheet | 2n4124 | mj15022 | toshiba c5198 | irf520n datasheet | tip107