HGP082N10M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGP082N10M  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 176 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm

Encapsulados: TO-220

  📄📄 Copiar 

 Búsqueda de reemplazo de HGP082N10M MOSFET

- Selecciónⓘ de transistores por parámetros

 

HGP082N10M datasheet

 ..1. Size:852K  cn hunteck
 hgb082n10m hgp082n10m.pdf pdf_icon

HGP082N10M

, HGB082N10M HGP082N10M P-1 100V N-Ch Power MOSFET 100 V Feature VDS TO-263 6.1 RDS(on),typ m Optimized for high speed smooth switching TO-220 6.4 RDS(on),typ m Enhanced Body diode dv/dt capability 100 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Drain Hard Switchin

 9.1. Size:1212K  cn hunteck
 hgb088n15s hgp088n15s.pdf pdf_icon

HGP082N10M

HGB088N15S HGP088N15S , P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 7.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 113 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a

 9.2. Size:944K  cn hunteck
 hgp080n10s.pdf pdf_icon

HGP082N10M

HGP080N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 7.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 82 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Pin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 9.3. Size:924K  cn hunteck
 hgb080n10al hgp080n10al.pdf pdf_icon

HGP082N10M

HGB080N10AL , HGP080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 7.1 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 9.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 85 A ID (Sillico

MOSTRAR MÁS

Otros transistores... HGP070N15S, HGB080N08SL, HGP080N08SL, HGB080N10A, HGP080N10A, HGB080N10AL, HGP080N10AL, HGB082N10M, AOD4184A, HGB088N15S, HGP088N15S, HGB090N06SL, HGP090N06SL, HGB095NE4SL, HGP095NE4SL, HGB098N10A, HGP098N10A