HGB100N12S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGB100N12S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 214 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 109 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 235 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0097 Ohm

Encapsulados: TO-263

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HGB100N12S datasheet

 ..1. Size:813K  cn hunteck
 hgb100n12s hgp100n12s.pdf pdf_icon

HGB100N12S

, HGB100N12S HGP100N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-263 8.3 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 8.6 RDS(on),typ m Enhanced Avalanche Ruggedness 109 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching

 9.1. Size:979K  cn hunteck
 hgb105n15s hgp105n15s.pdf pdf_icon

HGB100N12S

, HGB105N15S HGP105N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 104 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS

 9.2. Size:872K  cn hunteck
 hgb105n15m hgk105n15m hgp105n15m.pdf pdf_icon

HGB100N12S

, P-1 HGB105N15M HGK105N15M HGP105N15M 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 8.5 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 8.8 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 120 A ID (Sillicon Limited) Lead Free Application Synch

 9.3. Size:855K  cn hunteck
 hgb105n15sl hgp105n15sl.pdf pdf_icon

HGB100N12S

HGB105N15SL HGP105N15SL , P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching, Logic Level TO-263 8.7 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 9 RDS(on),typ m Enhanced Avalanche Ruggedness 122 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synch

MOSTRAR MÁS

Otros transistores... HGB090N06SL, HGP090N06SL, HGB095NE4SL, HGP095NE4SL, HGB098N10A, HGP098N10A, HGB098N10AL, HGP098N10AL, IRF540N, HGP100N12S, HGB105N15M, HGK105N15M, HGP105N15M, HGB105N15S, HGP105N15S, HGB105N15SL, HGP105N15SL