HGB100N12S MOSFET. Datasheet pdf. Equivalent

   Type Designator: HGB100N12S
   Marking Code: GB100N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 109 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
   Package: TO-263

HGB100N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS