HGP105N15SL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGP105N15SL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 333 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 302 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0123 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET HGP105N15SL
Principales características: HGP105N15SL
hgb105n15sl hgp105n15sl.pdf
HGB105N15SL HGP105N15SL , P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching, Logic Level TO-263 8.7 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 9 RDS(on),typ m Enhanced Avalanche Ruggedness 122 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synch
hgb105n15s hgp105n15s.pdf
, HGB105N15S HGP105N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 104 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS
hgb105n15m hgk105n15m hgp105n15m.pdf
, P-1 HGB105N15M HGK105N15M HGP105N15M 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 8.5 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 8.8 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 120 A ID (Sillicon Limited) Lead Free Application Synch
hgp100n12sl.pdf
HGP100N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic level 7.8 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 8.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 109 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchin
Otros transistores... HGB100N12S , HGP100N12S , HGB105N15M , HGK105N15M , HGP105N15M , HGB105N15S , HGP105N15S , HGB105N15SL , IRFB4110 , HGB110N10SL , HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A .
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