HGP105N15SL Todos los transistores

 

HGP105N15SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGP105N15SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 302 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0123 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de HGP105N15SL MOSFET

   - Selección ⓘ de transistores por parámetros

 

HGP105N15SL Datasheet (PDF)

 ..1. Size:855K  cn hunteck
 hgb105n15sl hgp105n15sl.pdf pdf_icon

HGP105N15SL

HGB105N15SL HGP105N15SL, P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 8.7RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 9RDS(on),typ m Enhanced Avalanche Ruggedness122 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synch

 4.1. Size:979K  cn hunteck
 hgb105n15s hgp105n15s.pdf pdf_icon

HGP105N15SL

,HGB105N15S HGP105N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power SwitchingTO-263 9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 9.3RDS(on),typ mW Enhanced Avalanche Ruggedness104 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

 5.1. Size:872K  cn hunteck
 hgb105n15m hgk105n15m hgp105n15m.pdf pdf_icon

HGP105N15SL

, P-1HGB105N15M HGK105N15MHGP105N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 8.5RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 8.8RDS(on),typ m 100% UIS Tested, 100% Rg Tested120 AID (Sillicon Limited) Lead FreeApplication Synch

 9.1. Size:802K  cn hunteck
 hgp100n12sl.pdf pdf_icon

HGP105N15SL

HGP100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchin

MOSTRAR MÁS

Otros transistores... HGB100N12S , HGP100N12S , HGB105N15M , HGK105N15M , HGP105N15M , HGB105N15S , HGP105N15S , HGB105N15SL , IRF640N , HGB110N10SL , HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A .

History: SGSP382 | 2SK1562 | 2SK2749 | SMIRF8N60T2TL | SVSP11N60SD2 | ZXMN10A11K | 2SK4075B

 

 
Back to Top

 


 
.