HGP105N15SL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGP105N15SL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 333 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 302 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0123 Ohm

Encapsulados: TO-220

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HGP105N15SL datasheet

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 hgb105n15sl hgp105n15sl.pdf pdf_icon

HGP105N15SL

HGB105N15SL HGP105N15SL , P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching, Logic Level TO-263 8.7 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 9 RDS(on),typ m Enhanced Avalanche Ruggedness 122 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synch

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 hgb105n15s hgp105n15s.pdf pdf_icon

HGP105N15SL

, HGB105N15S HGP105N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 104 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS

 5.1. Size:872K  cn hunteck
 hgb105n15m hgk105n15m hgp105n15m.pdf pdf_icon

HGP105N15SL

, P-1 HGB105N15M HGK105N15M HGP105N15M 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 8.5 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 8.8 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 120 A ID (Sillicon Limited) Lead Free Application Synch

 9.1. Size:802K  cn hunteck
 hgp100n12sl.pdf pdf_icon

HGP105N15SL

HGP100N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic level 7.8 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 8.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 109 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchin

MOSTRAR MÁS

Otros transistores... HGB100N12S, HGP100N12S, HGB105N15M, HGK105N15M, HGP105N15M, HGB105N15S, HGP105N15S, HGB105N15SL, IRFB4110, HGB110N10SL, HGP110N10SL, HGB110N20S, HGK110N20S, HGP110N20S, HGB115N15S, HGP115N15S, HGB120N10A