Справочник MOSFET. HGP105N15SL

 

HGP105N15SL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HGP105N15SL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 333 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 302 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0123 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для HGP105N15SL

   - подбор ⓘ MOSFET транзистора по параметрам

 

HGP105N15SL Datasheet (PDF)

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hgb105n15sl hgp105n15sl.pdfpdf_icon

HGP105N15SL

HGB105N15SL HGP105N15SL, P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 8.7RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 9RDS(on),typ m Enhanced Avalanche Ruggedness122 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synch

 4.1. Size:979K  cn hunteck
hgb105n15s hgp105n15s.pdfpdf_icon

HGP105N15SL

,HGB105N15S HGP105N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power SwitchingTO-263 9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 9.3RDS(on),typ mW Enhanced Avalanche Ruggedness104 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

 5.1. Size:872K  cn hunteck
hgb105n15m hgk105n15m hgp105n15m.pdfpdf_icon

HGP105N15SL

, P-1HGB105N15M HGK105N15MHGP105N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 8.5RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 8.8RDS(on),typ m 100% UIS Tested, 100% Rg Tested120 AID (Sillicon Limited) Lead FreeApplication Synch

 9.1. Size:802K  cn hunteck
hgp100n12sl.pdfpdf_icon

HGP105N15SL

HGP100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchin

Другие MOSFET... HGB100N12S , HGP100N12S , HGB105N15M , HGK105N15M , HGP105N15M , HGB105N15S , HGP105N15S , HGB105N15SL , IRF640N , HGB110N10SL , HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A .

History: 2SK135 | BSP316P | SWP10N50K | 8N60L-TF2-T | 2SK3355-ZJ | NCE70N290I | HGW055N10SL

 

 
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