FDS8882 Todos los transistores

 

FDS8882 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS8882

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 138 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: SO-8

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FDS8882 datasheet

 ..1. Size:280K  fairchild semi
 fds8882.pdf pdf_icon

FDS8882

December 2008 FDS8882 N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 m Features General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 A The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(o

 8.1. Size:305K  fairchild semi
 fds8884.pdf pdf_icon

FDS8882

February 2006 FDS8884 N-Channel PowerTrench MOSFET 30V, 8.5A, 23m General Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A either synchronous or conventional switching PWM controllers. It has been opt

 8.2. Size:620K  fairchild semi
 fds8880.pdf pdf_icon

FDS8882

April 2007 tm FDS8880 N-Channel PowerTrench MOSFET 30V, 11.6A, 10m Features General Description rDS(on) = 10m , VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m , VGS = 4.5V, ID = 10.7A either synchronous or conventional switching PWM controllers. It has been optimized fo

 8.3. Size:317K  onsemi
 fds8884.pdf pdf_icon

FDS8882

February 2006 FDS8884 N-Channel PowerTrench MOSFET 30V, 8.5A, 23m General Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A either synchronous or conventional switching PWM controllers. It has been opt

MOSTRAR MÁS

Otros transistores... FDS8870 , SP3903 , FDS8876 , SP3902 , FDS8878 , SP3901 , FDS8880 , SP3900 , 10N65 , SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , FDS89141 , SP2112 , FDS89161 .

History: MTP30P06V | ZXMN6A11Z | STF21NM60N | SRC65R032FB | FDS8896

 

 

 

 

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