Справочник MOSFET. FDS8882

 

FDS8882 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS8882
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 138 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS8882

 

 

FDS8882 Datasheet (PDF)

 ..1. Size:280K  fairchild semi
 fds8882.pdf

FDS8882 FDS8882

December 2008FDS8882N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 mFeatures General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 AThe FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(o

 8.1. Size:305K  fairchild semi
 fds8884.pdf

FDS8882 FDS8882

February 2006FDS8884N-Channel PowerTrench MOSFET30V, 8.5A, 23mGeneral Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5Aeither synchronous or conventional switching PWM controllers. It has been opt

 8.2. Size:620K  fairchild semi
 fds8880.pdf

FDS8882 FDS8882

April 2007tmFDS8880N-Channel PowerTrench MOSFET 30V, 11.6A, 10mFeatures General Description rDS(on) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m, VGS = 4.5V, ID = 10.7Aeither synchronous or conventional switching PWM controllers. It has been optimized fo

 8.3. Size:317K  onsemi
 fds8884.pdf

FDS8882 FDS8882

February 2006FDS8884N-Channel PowerTrench MOSFET30V, 8.5A, 23mGeneral Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5Aeither synchronous or conventional switching PWM controllers. It has been opt

 8.4. Size:564K  onsemi
 fds8880.pdf

FDS8882 FDS8882

FDS8880N-Channel PowerTrench MOSFET30V, 11.6A, 10mFeatures General Description rDS(on) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m, VGS = 4.5V, ID = 10.7Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate charge

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