HGD035N08AL MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: HGD035N08AL

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HGD035N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level 3.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 4.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 140 A ID (Silicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rec

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HGD035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 144 A ID (Silicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hi

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P-1 HGD032NE4S 45V N-Ch Power MOSFET Feature 45 V VDS Optimized for high speed switching 2.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 148 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain TO-252

Otros transistores... HGB640N25S , HGK640N25S , HGP640N25S , HGD028NE6A , HGD028NE6AL , HGD029NE4SL , HGD032NE4S , HGD035N08A , IRF1407 , HGD040N06S , HGD040N06SL , HGI040N06SL , HGD045NE4SL , HGD046NE6A , HGD046NE6AL , HGD050N10A , HGD053N06S .