All MOSFET. HGD035N08AL Datasheet

 

HGD035N08AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGD035N08AL
   Marking Code: GD035N08AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 706 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO-252

 HGD035N08AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGD035N08AL Datasheet (PDF)

 ..1. Size:908K  cn hunteck
 hgd035n08al.pdf

HGD035N08AL HGD035N08AL

HGD035N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level3.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness140 AID (Silicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rec

 4.1. Size:900K  cn hunteck
 hgd035n08a.pdf

HGD035N08AL HGD035N08AL

HGD035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.2RDS(on),typ mW Enhanced Body diode dv/dt capability144 AID (Silicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi

 9.1. Size:890K  cn hunteck
 hgd032ne4s.pdf

HGD035N08AL HGD035N08AL

P-1HGD032NE4S45V N-Ch Power MOSFETFeature45 VVDS Optimized for high speed switching2.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability148 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainTO-252

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