HGD035N08AL Datasheet. Specs and Replacement
Type Designator: HGD035N08AL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 706 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO-252
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HGD035N08AL substitution
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HGD035N08AL datasheet
hgd035n08al.pdf
HGD035N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level 3.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 4.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 140 A ID (Silicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rec... See More ⇒
hgd035n08a.pdf
HGD035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 144 A ID (Silicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hi... See More ⇒
hgd032ne4s.pdf
P-1 HGD032NE4S 45V N-Ch Power MOSFET Feature 45 V VDS Optimized for high speed switching 2.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 148 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain TO-252 ... See More ⇒
Detailed specifications: HGB640N25S, HGK640N25S, HGP640N25S, HGD028NE6A, HGD028NE6AL, HGD029NE4SL, HGD032NE4S, HGD035N08A, IRF1407, HGD040N06S, HGD040N06SL, HGI040N06SL, HGD045NE4SL, HGD046NE6A, HGD046NE6AL, HGD050N10A, HGD053N06S
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