HGD040N06S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGD040N06S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 984 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO-252

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HGD040N06S datasheet

 ..1. Size:998K  cn hunteck
 hgd040n06s.pdf pdf_icon

HGD040N06S

P-1 HGD040N06S 60V N-Ch Power MOSFET 60 V VDS Feature 3.4 RDS(on),typ mW Optimized for high speed switching 144 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 70 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switchi

 0.1. Size:894K  cn hunteck
 hgd040n06sl hgi040n06sl.pdf pdf_icon

HGD040N06S

HGD040N06SL HGI040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 3.3 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 132 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Applica

 9.1. Size:898K  cn hunteck
 hgd046ne6a.pdf pdf_icon

HGD040N06S

P-1 HGD046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 101 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin2

 9.2. Size:818K  cn hunteck
 hgd045ne4sl.pdf pdf_icon

HGD040N06S

HGD045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 114 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn

MOSTRAR MÁS

Otros transistores... HGK640N25S, HGP640N25S, HGD028NE6A, HGD028NE6AL, HGD029NE4SL, HGD032NE4S, HGD035N08A, HGD035N08AL, 2SK3568, HGD040N06SL, HGI040N06SL, HGD045NE4SL, HGD046NE6A, HGD046NE6AL, HGD050N10A, HGD053N06S, HGD053N06SL