All MOSFET. HGD040N06S Datasheet

 

HGD040N06S Datasheet and Replacement


   Type Designator: HGD040N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 984 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-252
 

 HGD040N06S substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGD040N06S Datasheet (PDF)

 ..1. Size:998K  cn hunteck
 hgd040n06s.pdf pdf_icon

HGD040N06S

P-1HGD040N06S60V N-Ch Power MOSFET60 VVDSFeature3.4RDS(on),typ mW Optimized for high speed switching144 AID (Sillicon Limited) Enhanced Body diode dv/dt capability70 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi

 0.1. Size:894K  cn hunteck
 hgd040n06sl hgi040n06sl.pdf pdf_icon

HGD040N06S

HGD040N06SL HGI040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature3.3RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability132 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplica

 9.1. Size:898K  cn hunteck
 hgd046ne6a.pdf pdf_icon

HGD040N06S

P-1HGD046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability101 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2

 9.2. Size:818K  cn hunteck
 hgd045ne4sl.pdf pdf_icon

HGD040N06S

HGD045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability114 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

SHOW MORE

Datasheet: HGK640N25S , HGP640N25S , HGD028NE6A , HGD028NE6AL , HGD029NE4SL , HGD032NE4S , HGD035N08A , HGD035N08AL , 5N65 , HGD040N06SL , HGI040N06SL , HGD045NE4SL , HGD046NE6A , HGD046NE6AL , HGD050N10A , HGD053N06S , HGD053N06SL .

History: HGD035N08AL | AP25N10GH | UT3N06G-TM3-T | KIA4N60H-252 | HMS17N65F | D5N65-XAD | SSF4604

Keywords - HGD040N06S MOSFET datasheet

 HGD040N06S cross reference
 HGD040N06S equivalent finder
 HGD040N06S lookup
 HGD040N06S substitution
 HGD040N06S replacement

 

 
Back to Top

 


 
.