HGD040N06S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD040N06S
Marking Code: GD040N06S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 53 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 984 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-252
HGD040N06S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD040N06S Datasheet (PDF)
hgd040n06s.pdf
P-1HGD040N06S60V N-Ch Power MOSFET60 VVDSFeature3.4RDS(on),typ mW Optimized for high speed switching144 AID (Sillicon Limited) Enhanced Body diode dv/dt capability70 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi
hgd040n06sl hgi040n06sl.pdf
HGD040N06SL HGI040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature3.3RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability132 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplica
hgd046ne6a.pdf
P-1HGD046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability101 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2
hgd045ne4sl.pdf
HGD045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability114 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn
hgd046ne6al.pdf
P-1HGD046NE6AL65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness101 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
