All MOSFET. HGD040N06S Datasheet

 

HGD040N06S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGD040N06S
   Marking Code: GD040N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 53 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 984 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-252

 HGD040N06S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGD040N06S Datasheet (PDF)

 ..1. Size:998K  cn hunteck
 hgd040n06s.pdf

HGD040N06S HGD040N06S

P-1HGD040N06S60V N-Ch Power MOSFET60 VVDSFeature3.4RDS(on),typ mW Optimized for high speed switching144 AID (Sillicon Limited) Enhanced Body diode dv/dt capability70 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi

 0.1. Size:894K  cn hunteck
 hgd040n06sl hgi040n06sl.pdf

HGD040N06S HGD040N06S

HGD040N06SL HGI040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature3.3RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability132 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplica

 9.1. Size:898K  cn hunteck
 hgd046ne6a.pdf

HGD040N06S HGD040N06S

P-1HGD046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability101 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2

 9.2. Size:818K  cn hunteck
 hgd045ne4sl.pdf

HGD040N06S HGD040N06S

HGD045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability114 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

 9.3. Size:898K  cn hunteck
 hgd046ne6al.pdf

HGD040N06S HGD040N06S

P-1HGD046NE6AL65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness101 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

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