HGD045NE4SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGD045NE4SL
Código: GD045NE4SL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 45 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 70 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 42 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 756 pF
Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET HGD045NE4SL
HGD045NE4SL Datasheet (PDF)
hgd045ne4sl.pdf
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hgd046ne6al.pdf
P-1HGD046NE6AL65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness101 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
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hgd040n06s.pdf
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Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SST65R360S2
