HGD046NE6A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGD046NE6A
Código: GD046NE6A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 94 W
Voltaje máximo drenador - fuente |Vds|: 65 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 101 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 41 nC
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 769 pF
Resistencia entre drenaje y fuente RDS(on): 0.0046 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET HGD046NE6A
HGD046NE6A Datasheet (PDF)
hgd046ne6a.pdf
P-1HGD046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability101 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2
hgd046ne6al.pdf
P-1HGD046NE6AL65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness101 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
hgd045ne4sl.pdf
HGD045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability114 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn
hgd040n06sl hgi040n06sl.pdf
HGD040N06SL HGI040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature3.3RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability132 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplica
hgd040n06s.pdf
P-1HGD040N06S60V N-Ch Power MOSFET60 VVDSFeature3.4RDS(on),typ mW Optimized for high speed switching144 AID (Sillicon Limited) Enhanced Body diode dv/dt capability70 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi
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