HGD046NE6A MOSFET Datasheet: N-Ch, 65V, 101A. Full specification with pinout and replacement list

HGD046NE6A Specs and Replacement

   Type Designator: HGD046NE6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 101 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 769 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TO-252

HGD046NE6A substitution

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HGD046NE6A datasheet

..1. Size:898K cn hunteck
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P-1 HGD046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 101 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin2... See More ⇒

0.1. Size:898K cn hunteck
hgd046ne6al.pdf pdf_icon

P-1 HGD046NE6AL 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 3.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 101 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

9.1. Size:818K cn hunteck
hgd045ne4sl.pdf pdf_icon

HGD045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 114 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn... See More ⇒

9.2. Size:894K cn hunteck
hgd040n06sl hgi040n06sl.pdf pdf_icon

HGD040N06SL HGI040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 3.3 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 132 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Applica... See More ⇒