HGI053N06SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGI053N06SL
Código: GI053N06SL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 70 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 36 nC
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 793 pF
Resistencia entre drenaje y fuente RDS(on): 0.0053 Ohm
Paquete / Cubierta: TO-251
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HGI053N06SL Datasheet (PDF)
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