HGI053N06SL Todos los transistores

 

HGI053N06SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGI053N06SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 793 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
   Paquete / Cubierta: TO-251
 

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HGI053N06SL Datasheet (PDF)

 ..1. Size:908K  cn hunteck
 hgd053n06sl hgi053n06sl.pdf pdf_icon

HGI053N06SL

HGD053N06SL , HGI053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness105 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication

 9.1. Size:964K  cn hunteck
 hgd059n08al hgi059n08al.pdf pdf_icon

HGI053N06SL

, P-1HGD059N08ALHGI059N08AL80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness88 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i

 9.2. Size:959K  cn hunteck
 hgd059n08a hgi059n08a.pdf pdf_icon

HGI053N06SL

, P-1HGD059N08AHGI059N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability89 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circu

 9.3. Size:931K  cn hunteck
 hgi050n10al.pdf pdf_icon

HGI053N06SL

HGI050N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness112 AID 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPSTO-251 Hard Switching and Hig

MOSTRAR MÁS

Otros transistores... HGD040N06SL , HGI040N06SL , HGD045NE4SL , HGD046NE6A , HGD046NE6AL , HGD050N10A , HGD053N06S , HGD053N06SL , NCEP15T14 , HGD058N08SL , HGD059N08A , HGI059N08A , HGD059N08AL , HGI059N08AL , HGD077N10SL , HGI077N10SL , HGD080N10A .

History: BUK9K6R2-40E

 

 
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